The new Batch In-Line Sputtering Systems Models BH3F and BH4F from TFE are flexible process tools, with an inline architecture designed for a variety of different substrates.
The new batch inline sputtering system from TFE provides DC magnetron, RF magnetron and RF diode capabilities in all sputtering positions, without changing the cathode. RF etch capability is also included. System operation is under PLC control (Mitsubishi model). A wide variety of options add to system’s flexibility and include PULSED power supply, DC bias, co-sputtering capabilities, through-the-wall capability, high uniformity heating station, dual cathode.
A special two-level loadlock accepts uncoated pallets on the first level and gives access to processed pallets on the second level. Venting, loading and pump-down all occur while the wafers in the process chamber are being coated, thereby assuring efficient operation and high throughput. Multi-level loadlock is available as option
Standard pallets for the new Batch inline sputtering system from TFE are in stainless steel and are available in a variety of configurations, depending on substrate size. Capacities range from thirty six 2” wafers to four 150mm wafers (for example)- Custom pallets can be provided upon request.
Specially designed stainless steel shutters protect adjacent targets from contamination during sputtering and keep optional heater from being coated.
High vacuum pumpdown is achieved with a 1500 litre per second, closed-cycle helium cryogenic pump. Roughing of the main chamber and loadlock is performed by a two-stage 27 cfm mechanical pump, dry is an option. Computer controls gas during process with pressure or flow. Five different gases are available as option with/without gas ring around target for reactive process and high uniformity
The new Batch inline sputtering system from TFE features sputter process capability in all three cathode positions. A wide selection of cathodes is available to fit virtually any application. They include: • High production clamed target on special cathodes in CHI, UPSILON, MU (4-piece) • Planar magnetron cathodes in standard and Magterial (to deposit magnetic materials) • Planar diode cathodes to be used in RF mode
RF sputter etching s performed on a pneumatically operated, water cooled etch platform that moves vertically to automatically remove the pallet from, then restore the pallet to the pallet carrier after etching
Substrate heating may be accomplished with the installation of optional heater stations that are mounted on the chamber front plate at the etch station
Different RF power supplies are available at customer’s request
An independent RF autotuning network provides feedback control to maintain minimum reflected power for all RF modes of operation
Different DC power supplies are available at customer’s request
An optional power supply is available for DC biasing of substrates
The following utility requirements are typical. They may vary with the addition of certain options Power: 380V, 3 phase 50Hz Water: 4 GPM, up to 90 PSIG max, 18-24 °C Resistivity: 4 kohm-cm minimum Air: 100 PSIG filtered, 3 CFM intermittent Sputtering Gas: typically 5 PSIG Argon, 50 to 150 sccm